Study of Si/GeSi p-n heterostructures

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Abstract
The experimental results of a molecular‐beam epitaxy grown Si/GeSi p‐n heterojunction are reported. It is found that the current flow in these p‐n heterojunctions shows a nonideality factor of about 1.5 at room temperature and 2.35 at liquid nitrogen temperature. The nonideal behavior of the Si/GeSi p‐n heterojunction is attributed to the charges that are trapped at the heterointerface. Annealing the samples at temperatures higher than the growth temperature results in an increase in the density of defects as well as an increase in the nonideal current. C‐V measurements were employed to further investigate the behavior of the charges that are trapped in the interface. From C‐V measurements under reverse bias it is found that increasing the annealing time and temperature increases the density of interface traps. In addition, a charge density of about 1012 cm−2 is found to be present at the Si/GeSi interface for the as‐grown sample and increases with increasing annealing time and temperature.