Spatial Distribution and Surface Loss of CF3 and CF2 Radicals in a CF4 Etching Plasma
- 1 March 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (3A) , L353
- https://doi.org/10.1143/jjap.32.l353
Abstract
The absolute number density and the spatial distribution of CF3 and CF2 radicals in a radio-frequency CF4 plasma were measured using threshold-ionization mass spectrometry. The time constant of density decay in an afterglow was measured to be almost independent of pressures (15-100 mTorr) and rf powers (10-100 W). This suggests that surface reactions rather than gas phase reactions may primarily be responsibile for the radical loss. The surface loss probability s of CF3 and CF2 radicals was estimated in this well-defined system to be s=0.012 and 0.014, respectively.Keywords
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