Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4) , 569-572
- https://doi.org/10.1016/0167-9317(91)90286-m
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- W-band low-noise InAlAs/InGaAs lattice-matched HEMTsIEEE Electron Device Letters, 1990
- AlInAs-GaInAs HEMT for microwave and millimeter-wave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989
- Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxyJournal of Applied Physics, 1987
- The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1984