Surface aspects of the thermal degradation of GaAs p-n junction lasers and tunnel diodes

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Abstract
Owing to the similarity of the junction widths and doping levels in epitaxially formed GaAs lasers and conventional tunnel diodes, the gradual degradation of the latter under use might be expected to be intensified in the case of lasers operating under high duty cycle or CW conditions. It was found that the current-voltage characteristics of both the lasers and tunnel diodes underwent considerable thermal degradation even when no bias was applied, and that the degradation was limited to surface or "junction edge" effects. The degradation of the current-voltage characteristic was correlated with degradation in the light output under forward bias. It was concluded that degradation under forward bias was also a surface effect induced by heating rather than by deterioration of the junction in the bulk, as commonly believed. Methods of controlling the degradations are discussed.