High-power, highly-reliable operation of InGaAs/InGaAsP0.98 µm lasers with an exponential-shaped flared stripe
- 21 November 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (24) , 2277-2279
- https://doi.org/10.1049/el:19961483
Abstract
A 0.98 µm InGaAs/InGaAsP/GaAs strained quantum-well laser with an exponential-shaped-flared stripe has been developed. Its maximum output power is 40 – 60% higher than that of ordinary straight-stripe lasers for the same kink-occurrence output power. Testing at 150 mW showed stable operation with an estimated lifetime of >200000 h.Keywords
This publication has 3 references indexed in Scilit:
- High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriersIEEE Journal of Selected Topics in Quantum Electronics, 1995
- 0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguidesIEEE Journal of Quantum Electronics, 1993
- High Power Diode Laser Research In Mitsubishi ElectricPublished by SPIE-Intl Soc Optical Eng ,1988