0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (6) , 1936-1942
- https://doi.org/10.1109/3.234456
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- High power InGaAs/AlGaAs singlemode laser diodes suitable for pumping Pr 3+ -doped fluoride fibre optic amplifiersElectronics Letters, 1992
- High receiver sensitivity at 10 Gb/s using an Er-doped fiber preamplifier pumped with a 0.98 mu m laser diodeIEEE Photonics Technology Letters, 1991
- InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiencyApplied Physics Letters, 1990
- Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thicknessApplied Physics Letters, 1989
- Operating characteristics of InGaAs/AlGaAs strained single quantum well lasersApplied Physics Letters, 1989
- 830 nm high-power low-noise self-aligned AlGaAs/GaAs double-quantum-well lasersElectronics Letters, 1989
- AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxyIEEE Journal of Quantum Electronics, 1987
- Reduction of lasing threshold current density by the lowering of valence band effective massJournal of Lightwave Technology, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974