Inspection of n-type InP crystals by scanning photoluminescence measurements
- 1 January 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (1A) , A73-A79
- https://doi.org/10.1088/0268-1242/7/1a/014
Abstract
Room temperature scanning photoluminescence (SPL) measurements were performed on n-type (Sn-doped, S-doped and undoped) InP crystals provided by various suppliers. It was found that defects and non-uniformities such as doping striations, dislocations and subsurface defects are associated with specific 'signatures' in SPL images, regardless of the type of doping and the origin of the samples. SPL measurements appear to be useful for routine inspection of this material because they are fast and non-destructive.Keywords
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