Electron-paramagnetic-resonance measurements on the divacancy defect centerin diamond
- 15 May 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (20) , 12900-12910
- https://doi.org/10.1103/physrevb.59.12900
Abstract
Electron-paramagnetic-resonance (EPR) studies in radiation damaged diamond enriched to 5% have resulted in the identification of the nearest-neighbor divacancy center. It is the isotopic enrichment, and consequent observation of hyperfine lines, that has permitted the structure to be determined more than 30 years after the discovery of the center, known as or The center is produced by annealing radiation damaged diamonds to temperatures at which the vacancy is mobile (above about 900 K), and in pure diamond it is the dominant vacancy related product of irradiation and 900 K annealing. The divacancy anneals out upon prolonged annealing to temperatures above about 1100 K. Low-temperature EPR measurements determine the absolute sign of the largest principal value of the Ḏ matrix, to be negative; and measurements at temperatures between 4.2 and 300 K indicate that the Ḏ matrix is temperature dependent in this interval. The center has symmetry at low temperatures (30 K), and appears to change to axial symmetry about at high temperatures Analysis of the hyperfine-coupling data using a simple molecular-orbital model shows that at low temperature the unpaired electron probability density is primarily located on four equivalent carbon atoms that are not in the plane of reflection symmetry containing the two vacancies. These four carbon atoms show an outward relaxation around the divacancy. The low-temperature symmetry and localization of the unpaired electron probability density is surprising, the former in the light of theoretical predictions of a ground state in the undistorted symmetry and the latter in comparison with divacancies in silicon. A simple defect molecule calculation suggests that the divacancy has a ground state at low temperatures with symmetry. The large linewidth leaves it unclear whether the symmetry changes at high temperatures to The broadening of the EPR linewidth with increasing temperature does not originate from thermally activated reorientation between sites with symmetry. It appears to be due to rapid spin- lattice relaxation (via the Orbach mechanism) at temperatures above 50 K, and simple analysis suggests that there is an excited state 20(1) meV above the ground state.
Keywords
This publication has 21 references indexed in Scilit:
- Supercell calculation of relaxation at the vacancy in diamondSolid State Communications, 1996
- Lattice distortions and electronic structure in the negative silicon vacancyPhysical Review B, 1996
- Electron spin resonance of the R4/W6 defect in irradiated diamondPhilosophical Magazine Part B, 1995
- Ab initioinvestigation of the native defects in diamond and self-diffusionPhysical Review B, 1995
- Effect of image potential and charge exchange on the trajectory of fast protons in surface scatteringPhysical Review A, 1992
- EPR identification of the negatively charged vacancy in diamondPhysical Review B, 1992
- Electronic structure of the neutral isolated divacancy in diamondJournal of Physics and Chemistry of Solids, 1969
- The optical absorption of the neutral vacancy in diamondJournal of Physics and Chemistry of Solids, 1968
- Colour centres in irradiated diamonds. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- The absorption spectra of irradiated diamonds after heat treatmentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956