Wideband low noise CMOS transimpedance amplifierfor gigaHertz operation
- 20 June 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (13) , 1194-1196
- https://doi.org/10.1049/el:19960814
Abstract
A novel low noise CMOS common gate transimpedance amplifier is presented. Simulated performances gives a 1.2 GHz bandwidth, 1.6 kΩ transimpedance gain, and very low input referred current noise. Results are comparable to those of a recent common base BiCMOS transimpedance amplifier.Keywords
This publication has 6 references indexed in Scilit:
- New analysis technique of transimpedance amplifiers with cascode structure: application to a DC-2.5 GHz MMIC amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-noise, low-distortion CMOS AM wide-band amplifiers matching a capacitive sourceIEEE Journal of Solid-State Circuits, 1990
- A 50-Mbit/s CMOS monolithic optical receiverIEEE Journal of Solid-State Circuits, 1988
- On the choice of optimum FET size in wide-band transimpedance amplifiersJournal of Lightwave Technology, 1988
- Transimpedance optical preamplifier with a very low input resistanceElectronics Letters, 1987
- A Feedback Receive Amplifier for Optical Transmission SystemsIEEE Transactions on Communications, 1976