Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies
- 15 July 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 90 (2) , 837-842
- https://doi.org/10.1063/1.1376673
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Drude conductivity of highly doped GaAs at terahertz frequenciesJournal of Applied Physics, 2000
- Multiple-frequency generation of sub-terahertz radiation by multimode LD excitation of photoconductive antennaIEEE Microwave and Guided Wave Letters, 1997
- Nature of Conduction in Doped SiliconPhysical Review Letters, 1997
- Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopyApplied Physics Letters, 1992
- Carrier dynamics of electrons and holes in moderately doped siliconPhysical Review B, 1990
- Far-infrared absorption of silicon crystalsJournal of Applied Physics, 1988
- Investigation of the complex permittivity of n-type silicon at millimeter wavelengthsJournal of Applied Physics, 1983
- Determination of effective mass values by a Kramers-Kronig analysis for variously doped silicon crystalsInfrared Physics, 1977
- Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in-Type SiliconPhysical Review B, 1973
- Microwave Conductivity of Silicon and GermaniumJournal of Applied Physics, 1968