Storage of electrons and holes in self-assembled InAs quantum dots
- 29 March 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (13) , 1839-1841
- https://doi.org/10.1063/1.123686
Abstract
We report spectroscopic measurements of charge-tunable quantum dots. The samples contain vertically aligned double dots which we can fill with electrons from a back contact. We show how we can also accumulate holes in the dots by illuminating the samples with below band gap radiation when a large negative bias is applied. We argue that this is possible through a large disparity in the electron and hole tunneling times. Interband spectroscopy reveals a strong reduction in the quantization energy for the dots in the second layer.Keywords
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