4.3 terahertz four-wave mixing spectroscopy of InGaAsP semiconductor amplfiers
- 21 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (21) , 2633-2635
- https://doi.org/10.1063/1.112586
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Carrier temperature and spectral holeburning dynamics in InGaAsP quantum well laser amplifiersApplied Physics Letters, 1994
- Above- and below-band femtosecond nonlinearities in active AlGaAs waveguidesApplied Physics Letters, 1992
- A high-power electron beam source based on the superemissive cathodeApplied Physics Letters, 1992
- Subpicosecond gain dynamics in InGaAsP optical amplifiers: Experiment and theoryApplied Physics Letters, 1992
- Observation of highly nondegenerate four-wave mixing in 1.5 mu m traveling-wave semiconductor optical amplifiers and estimation of nonlinear gain coefficientIEEE Journal of Quantum Electronics, 1992
- Effects of nonlinear gain on four-wave mixing and asymmetric gain saturation in a semiconductor laser amplifierApplied Physics Letters, 1991
- Femtosecond gain dynamics in InGaAsP optical amplifiersApplied Physics Letters, 1990
- Subpicosecond gain dynamics in GaAlAs laser diodesApplied Physics Letters, 1987
- Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasersIEEE Journal of Quantum Electronics, 1987
- Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasersIEEE Journal of Quantum Electronics, 1985