III-nitride blue microdisplays
Top Cited Papers
- 26 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (9) , 1303-1305
- https://doi.org/10.1063/1.1351521
Abstract
Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of and consists of pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems.
Keywords
This publication has 5 references indexed in Scilit:
- InGaN/GaN quantum well interconnected microdisk light emitting diodesApplied Physics Letters, 2000
- GaN microdisk light emitting diodesApplied Physics Letters, 2000
- Polarization-enhanced Mg doping of AlGaN/GaN superlatticesApplied Physics Letters, 1999
- Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlatticesApplied Physics Letters, 1999
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994