Polarization-enhanced Mg doping of AlGaN/GaN superlattices
- 18 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (16) , 2444-2446
- https://doi.org/10.1063/1.125042
Abstract
The hole-transport properties of Mg-doped AlGaN/GaN superlattices are carefully examined. Variable-temperature Hall-effect measurements indicate that the use of such superlattices enhances the average hole concentration at a temperature of 120 K by over five orders of magnitude compared to a bulk GaN film (the enhancement at room temperature is a factor of 9). An unusual modulation-doping scheme, which has been realized using molecular-beam epitaxy, has yielded high-hole-mobility superlattices and conclusively demonstrated the pivotal role of piezoelectric and spontaneous polarization in determining the band structure of the superlattices.Keywords
This publication has 11 references indexed in Scilit:
- Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlatticesApplied Physics Letters, 1999
- Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructuresApplied Physics Letters, 1999
- Aluminum gallium nitride short-period superlattices doped with magnesiumApplied Physics Letters, 1999
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlatticesJournal of Applied Physics, 1997
- Enhancement of deep acceptor activation in semiconductors by superlattice dopingApplied Physics Letters, 1996
- Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layersApplied Physics Letters, 1996
- Electrical Transport Properties of p-GaNJapanese Journal of Applied Physics, 1996
- A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor depositionJournal of Crystal Growth, 1994
- p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1994