Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures
- 26 April 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (17) , 2405-2407
- https://doi.org/10.1063/1.123897
Abstract
We have calculated hole transfer and low-temperature mobilities in p-type GaN/AlGaN modulation-doped heterostructures. Although substantial p-type conduction is difficult to achieve in bulk nitrides, the strain-induced polarization field can greatly enhance the transfer of holes from relatively deep Mg acceptors in the AlGaN barrier into the GaN well. The calculations predict formation of a two-dimensional hole gas with densities greater than and with low-temperature mobilities in excess of
Keywords
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