Defect kinetics in a-Si:H — an alternative description
Open Access
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 621-623
- https://doi.org/10.1016/0022-3093(89)90669-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Chapter 2 The Optical Absorption Edge of a-Si: HPublished by Elsevier ,2008
- Kinetic and steady-state effects of illumination on defects in hydrogenated amorphous siliconJournal of Applied Physics, 1989
- Reinterpretation of degradation kinetics of amorphous siliconApplied Physics Letters, 1989
- Critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett. 4 5, 1075 (1984)]Applied Physics Letters, 1989
- Kinetics, energetics, and origins of defects in amorphous Si:HApplied Physics Letters, 1988
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980