Epitaxial growth of (Hg,Mn)Te by the interdiffused multilayer process
- 7 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (23) , 2983-2985
- https://doi.org/10.1063/1.109164
Abstract
Epitaxial films of (Hg,Mn)Te have been grown by metalorganic vapor phase epitaxy using the interdiffused multilayer process (IMP), on GaAs (100) substrates with a approximately 1 mum buffer layer of CdTe. In order to grow the MnTe component, it was found necessary to grow at 380-degrees-C with a precursor partial pressure ratio (Mn:Te) of 5-8. The IMP layers were found to be more uniform in composition and thickness than comparable layers of (Hg,Mn)Te grown by the more conventional direct alloy growth method. X-ray rocking curve widths for IMP layers were typically approximately 200'' with a variation across the layer of approximately 10%. Variations in composition were < 10%.Keywords
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