Large improvement in intersubband saturation intensityin InGaAs/AlAsSbquantum well
- 27 September 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (20) , 1265-1267
- https://doi.org/10.1049/el:20010844
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Nonlinearity and recovery time of 1.55 µmintersubbandabsorption in InGaAs/AlAs/AlAsSb coupled quantum wellsElectronics Letters, 2001
- Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlatticeApplied Physics Letters, 1999
- Ultrafast all-optical switching at 1.3µm/1.55 µm using novelInGaAs/AlAsSb/InP coupled double quantum well structure forintersubband transitionsElectronics Letters, 1999
- Relaxation Time of Short Wavelength Intersubband Transition in InGaAs/AlAs Quantum WellsJapanese Journal of Applied Physics, 1998