Resonant DX centers in highly doped Sn-Ga1−xAlxAs under hydrostatic pressure in magnetic field

This publication has 17 references indexed in Scilit:

• Shallow and deep donors in direct-gap $n$-type ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{A}\mathrm{s}:\mathrm{S}\mathrm{i}$ grown by molecular-beam epitaxy
  Physical Review B, 1984
• Si and Sn Doping in Al_xGa_1-xAs Grown by MBE
  Japanese Journal of Applied Physics, 1982
• Donor energy level for Se in Ga1−xAlxAs
  Applied Physics Letters, 1982
• The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
  Applied Physics Letters, 1981
• An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_1-xAs
  Japanese Journal of Applied Physics, 1981
• Electron transport and band structure ofGa1−xAlxAsalloys
  Physical Review B, 1980
• Pressure and compositional dependences of the Hall coefficient inAlxGa1−xAsand their significance
  Physical Review B, 1980
• Deep levels in Ga1−xAlxAs under pressure
  Applied Physics Letters, 1980
• Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
  Physical Review Letters, 1977
• Long-lifetime photoconductivity effect in n-type GaAlAs
  Applied Physics Letters, 1977