A theoretical study of field-enhanced emission (Poole-Frenkel effect)
- 1 January 1989
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 50 (4) , 363-368
- https://doi.org/10.1016/0022-3697(89)90435-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electric field dependence of capture and emission rates by truncated cascade recombinationPhysical Review B, 1989
- Internal Field-Assisted Thermal IonizationIEEE Transactions on Electrical Insulation, 1987
- Field-enhanced emission and capture in polysilicon pn junctionsSolid-State Electronics, 1985
- Transient-current study of field-assisted emission from shallow levels in siliconPhysical Review B, 1984
- Negative-Properties for Interstitial Boron in SiliconPhysical Review Letters, 1982
- Deep trapping centres in n -GaAs surface barrier diodes for nuclear radiation detectionElectronics Letters, 1980
- The energy level of thallium in siliconApplied Physics Letters, 1978
- The Three-Dimensional Poole-Frenkel EffectJournal of Applied Physics, 1968
- Electronic properties of amorphous dielectric filmsThin Solid Films, 1967
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938