Electric field dependence of capture and emission rates by truncated cascade recombination
- 1 January 1989
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (1) , 91-93
- https://doi.org/10.1103/physrevb.39.91
Abstract
The recombination of electron-hole pairs by a new and analytically tractable cascade process is used to discuss the electric field dependence of emission and capture rates by means of the Poole-Frenkel effect. Comparison with experiment gives support to the new model, which suggests decrease of capture and increase of emission coefficients with increasing electric field.Keywords
This publication has 11 references indexed in Scilit:
- Surface recombination statistics at trapsSolid-State Electronics, 1983
- The Influence of the Electric Field on the Electron Capture Coefficient of Screened Coulomb CentresPhysica Status Solidi (b), 1981
- On the recombination of electrons and holes at traps with finite relaxation timeSolid-State Electronics, 1981
- Capture, emission and recombination at a deep level via an excited stateJournal of Physics C: Solid State Physics, 1980
- The energy level of thallium in siliconApplied Physics Letters, 1978
- V. A two stage model for deep level capturePhilosophical Magazine, 1977
- High-field capture of electrons by Coulomb-attractive centers in silicon dioxideJournal of Applied Physics, 1976
- Thermal emission and capture of electrons at sulfur centers in siliconSolid-State Electronics, 1971
- The Three-Dimensional Poole-Frenkel EffectJournal of Applied Physics, 1968
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960