Capture, emission and recombination at a deep level via an excited state
- 27 November 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (33) , 6157-6165
- https://doi.org/10.1088/0022-3719/13/33/013
Abstract
The kinetics of carrier capture, emission and recombination at a deep trap are studied using a model in which these processes go via an excited state. It is shown that non-exponential transients can result and that detailed balance interpretations should be used with care. The model is used to interpret experiments on Si:Se and Si:S.Keywords
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