High-resolution small-angle x-ray diffraction studies of evaporated silicon and germanium layers
- 14 August 1989
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 22 (8) , 1136-1142
- https://doi.org/10.1088/0022-3727/22/8/018
Abstract
Measurements on evaporated single layers and multilayers of silicon and germanium were carried out using a triple-crystal x-ray diffractometer with perfect Si(111) crystals as a monochromator and analyser. The very high resolution of the triple-crystal diffractometer allows a precise determination of the structural and optical parameters of the layers. The parameters were obtained by fitting a modified Parratt model to the experimental data.Keywords
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