Spiking at vertical electrical transport in a heterostructure device
- 1 May 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (5S) , 592-594
- https://doi.org/10.1088/0268-1242/9/5s/052
Abstract
In this work we present a new model describing the electrical transport in the heterostructure hot-electron diode. As in an earlier but less sophisticated approach, we find an interesting spatiotemporal behaviour of current filaments switching on and off (spiking). Comparison with a simple generic model indicates that spiking might be a generic mechanism for many types of devices exhibiting bistability.Keywords
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