Plasma-enhanced doping of manganese in zinc sulfide layers during metalorganic chemical vapor deposition
- 1 August 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (4) , 979-981
- https://doi.org/10.1016/0022-0248(89)90659-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- MOCVD — Current state and futureJournal of Crystal Growth, 1989
- The preparation of ZnS:Mn electroluminescent layers by MOCVD using new manganese sourcesJournal of Crystal Growth, 1988
- Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVDJapanese Journal of Applied Physics, 1988
- Plasma stimulated MOCVD of GaAsJournal of Crystal Growth, 1986
- Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAsJournal of Crystal Growth, 1986
- AC-Thin Film ZnS:Mn Electroluminescent Device Prepared by Metal Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1985
- ZnSe:Mn DC-Electroluminescent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVDJapanese Journal of Applied Physics, 1985
- Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour depositionJournal of Crystal Growth, 1982