Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour deposition
- 30 September 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (1-2) , 155-160
- https://doi.org/10.1016/0022-0248(82)90317-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Electro- and photoluminescence properties of Mn2+ in ZnS and ZnCdSJournal of Luminescence, 1981
- Vapor growth of InP for MESFET’SJournal of Electronic Materials, 1980
- A composite ZnS thin film powder electroluminescent panelDisplays, 1980
- Physical and electrical characterization of co-deposited Zns:Mn electroluminescent thin film structuresJournal of Electronic Materials, 1979
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978
- Growth of semi-insulating epitaxial gallium arsenide by chromium doping in the metal-alkyl+hydride systemJournal of Crystal Growth, 1978
- Emission centres of DC electroluminescence in ZnS:Mn thin filmsJournal of Luminescence, 1978
- Time resolved spectroscopy of ZnS : Mn by dye laser techniqueJournal of Luminescence, 1976
- The effect of Mn concentration on ZnS: Mn electroluminescence decayPhysica Status Solidi (a), 1975