Prospects of SiGe heterodevices

This publication has 10 references indexed in Scilit:

• Photoresponse model for Si/sub 1/spl minus/x/Ge/sub x//Si heterojunction internal photoemission infrared detector
  IEEE Electron Device Letters, 1994
• Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures
  Applied Physics Letters, 1993
• Intervalence-subband transition in SiGe/Si multiple quantum wells−normal incident detection
  Applied Physics Letters, 1992
• Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies
  Electronics Letters, 1992
• Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arrays
  IEEE Electron Device Letters, 1991
• Well-resolved band-edge photoluminescence of excitons confined in strained ${\mathrm{Si}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ quantum wells
  Physical Review Letters, 1991
• Low loss optical ridge waveguides in a strained GeSi epitaxial layer grown on silicon
  Electronics Letters, 1990
• Kinetics of ordered growth of Si on Si(100) at low temperatures
  Physical Review B, 1989
• Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration
  Electronics Letters, 1989
• Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1989