Electron scattering in heavily doped compensated polar semiconductors
- 15 May 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (10) , 6538-6541
- https://doi.org/10.1103/physrevb.25.6538
Abstract
A calculation of electron mobility in heavily doped compensated polar semiconductors is presented including lattice scattering as well as scattering from point-impurity charges and from the hitherto neglected dipoles formed by the donor-acceptor pairs. Comparison with experimental data for GaAs doped heavily with Si gives evidence that the consideration of dipoles is essential in accounting for the electron transport.Keywords
This publication has 8 references indexed in Scilit:
- Electron scattering by ionized impurities in semiconductorsReviews of Modern Physics, 1981
- Phase-shift calculation of ionized impurity scattering in semiconductorsPhysical Review B, 1981
- Electron Transport in Compound SemiconductorsPublished by Springer Nature ,1980
- Donor-acceptor pairing in the system GaP(Zn, O)Journal of Physics and Chemistry of Solids, 1971
- Silicon-Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site DistributionJournal of Applied Physics, 1969
- Microscopic Dielectric Function of a Model SemiconductorPhysical Review B, 1969
- Dipole scattering from ion pairs in compensated semiconductorsJournal of Physics and Chemistry of Solids, 1962
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956