Chapter 4 Melting Model of Pulsed Laser Processing

This publication has 77 references indexed in Scilit:

• A program to solve a solute diffusion problem with segregation at a moving interface
  Computer Physics Communications, 1981
• Fundamentals of Energy Transfer During Picosecond Irradiation of Silicon
  MRS Proceedings, 1981
• Phase Transitions in Amorphous Si Produced by Rapid Heating
  Physical Review Letters, 1980
• A melting model for pulsing-laser annealing of implanted semiconductors
  Journal of Applied Physics, 1979
• Time-resolved reflectivity of ion-implanted silicon during laser annealing
  Applied Physics Letters, 1978
• Transient temperature profiles within the active region of uniformly doped and high—Low doped Schottky IMPATT's
  IEEE Transactions on Electron Devices, 1978
• Arsenic diffusion in silicon melted by high-power nanosecond laser pulsing
  Applied Physics Letters, 1978
• Structural, Optical, and Electrical Properties of Amorphous Silicon Films
  Physical Review B, 1970
• Growth of Europium-Doped Single Crystals of BaO and SrO
  Journal of Applied Physics, 1965
• Auger effect in semiconductors
  Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959