Generalized Brooks’ formula and the electron mobility in SixGe1−x alloys
- 15 July 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (2) , 160-162
- https://doi.org/10.1063/1.96248
Abstract
A formula for alloy‐scattering‐limited electron mobility in semiconductors is obtained for indirect gap systems with multiple band minima. All the input parameters needed are defined explicitly. The drift mobility of SixGe1−x which has a dip at x ∼0.13 and a broader minimum at x ∼0.5 is calculated by adding alloy scattering to other scattering mechanisms and correlates well with the measured Hall mobility.Keywords
This publication has 12 references indexed in Scilit:
- Disorder scattering and electron mobility in Hg1-xCdxTeJournal of Physics C: Solid State Physics, 1983
- Electronic structure ofPhysical Review B, 1983
- A study of alloy scattering in Ga1−xAlxAsJournal of Applied Physics, 1980
- Theoretical calculations of electron mobility in ternary III-V compoundsJournal of Applied Physics, 1976
- Scattering mechanisms inPhysical Review B, 1975
- Disorder scattering in solid solutions of III–V semiconducting compoundsJournal of Physics and Chemistry of Solids, 1973
- Temperature Dependence of the Electron Density of States and dc Electrical Resistivity of Disordered Binary AlloysPhysical Review B, 1972
- Mobility of Electrons in Germanium-Silicon AlloysPhysical Review B, 1958
- Magnetoresistance of Germanium-Silicon AlloysPhysical Review B, 1955
- Zur Elektronentheorie der Metalle. IIAnnalen der Physik, 1931