Magnetotransistors in SOI technology
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 147-150
- https://doi.org/10.1109/iedm.1994.383443
Abstract
This paper reports on characterization and numerical modelling of dual-collector magnetotransistors with suppressed sidewall injection (SSIMT) fabricated in silicon on insulator (SOI) technology. This process allows to eliminate, by design, the undesirable high substrate current usually present in conventional bipolar or CMOS fabricated SSIMT's. Two-dimensional simulations reveal that the device operates like a PIN diode rather than as a true transistor, as expected. The presence of an electron-hole plasma in the active device region inhibits a proper transistor behavior. The magnetic performance of the SSIMT is improved by reducing the minority carrier lifetime and by redefining the doping profiles of the process.Keywords
This publication has 7 references indexed in Scilit:
- Micromachined magnetotransistorsSensors and Actuators A: Physical, 1995
- Operating principle of dual collector magnetotransistors studied by two-dimensional simulationIEEE Transactions on Electron Devices, 1994
- Determination of characteristic magnetotransistor parameters by measurement and inverse modellingSensors and Actuators A: Physical, 1993
- Dual collector magnetotransistors with on-chip bias and signal conditioning circuitrySensors and Actuators A: Physical, 1993
- Trends in silicon-on-insulator technologyMicroelectronic Engineering, 1992
- CMOS-compatible magnetic field sensors fabricated in standard and in silicon on insulator technologiesSensors and Actuators A: Physical, 1991
- A lateral magnetotransistor structure with a linear response to the magnetic fieldIEEE Transactions on Electron Devices, 1989