Trends in silicon-on-insulator technology
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 795-802
- https://doi.org/10.1016/0167-9317(92)90547-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Silicon-on-insulator 'gate-all-around device'Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Short channel effect in thin-film accumulation-mode p -channel SOI MOSFETsElectronics Letters, 1991
- Oxygen distribution in silicon-on-insulator layers obtained by zone melting recrystallizationJournal of Applied Physics, 1990
- Increased junction breakdown voltages in silicon-on-insulator diodesIEEE Transactions on Electron Devices, 1989
- Fabrication of thin silicon-on-insulator flims using laser recrystallisationElectronics Letters, 1985
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985
- Growth Process of Silicon Over SiO2 by CVD: Epitaxial Lateral Overgrowth TechniqueJournal of the Electrochemical Society, 1983
- Recrystallization of polysilicon films using incoherent lightMaterials Letters, 1982
- Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulatorsApplied Physics Letters, 1981
- Properties of ESFI MOS transistors due to the floating substrate and the finite volumeIEEE Transactions on Electron Devices, 1975