Challenges for accurate reliability projections in the ultra-thin oxide regime
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 80, 57-65
- https://doi.org/10.1109/relphy.1999.761593
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Dependence of dielectric time to breakdown distributions on test structure areaPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectricsMicroelectronic Engineering, 1997
- Soft breakdown of ultra-thin gate oxide layersIEEE Transactions on Electron Devices, 1996
- Mechanism for stress-induced leakage currents in thin silicon dioxide filmsJournal of Applied Physics, 1995
- Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on siliconJournal of Applied Physics, 1993
- A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Bimodal lifetime distributions of dielectrics for integrated circuitsQuality and Reliability Engineering International, 1991
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- On yield, fault distributions, and clustering of particlesIBM Journal of Research and Development, 1986
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966