Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility

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Abstract
The changes in internal stress and crystallinity in silicon- on-sapphire (SOS), as caused by pulse laser irradiation, were evaluated by Raman spectroscopy. The vertical distributions of the internal stress and the crystallinity in the silicon layer were found to be significantly affected by the number of laser pulses, although the energy density and width of the laser pulses were kept constant. The change in electron Hall mobility due to laser irradiation is discussed in relation to the internal stress and crystallinity of the SOS. An excessive number of pulses causes a reduction in the orientational order of the constituent crystallites in the silicon layer, with a decrease in the electron Hall mobility.