Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4) , L249-252
- https://doi.org/10.1143/jjap.20.l249
Abstract
The crystalline quality of silicon layers grown on sapphire substrates by vapor-phase epitaxial growth is improved by exposing the layers to multiple doses of laser irradiation of a suitable energy density. SOS wafers have been irradiated with 25 ns pulses from a Q-switched ruby laser. The samples have been analyzed by Hall mobility, defect density and channeling. The electron Hall mobilities of samples exposed 2–4 times at an energy density of 1.5 J/cm2 are twice those of as-grown SOS. Under the same conditions, etch pit density and stacking fault density decreased by a factor of 3–4 and 10, respectively.Keywords
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