Experimental evidence of two species of radiation induced trapped positive charge

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Abstract
The effects of alternating bias anneals of MOS transistors following either x-irradiation or Fowler-Nordheim Tunneling have been studied. It is found that some of the generated defects can be repeatedly charged and discharged with a change of applied oxide field. Two models to explain this phenomenon are discussed. One assumes a single defect, the E' center. The other model assumes a two defect model. The results of this work are shown to be more consistent with the two defect model.