Growth of GaAs epitaxial layers prepared in the laboratory with an integrated safety MOCVD system
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 587-593
- https://doi.org/10.1016/0169-4332(88)90356-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Design of a safe facility for the metalorganic chemical vapor deposition of high-purity GaAs and AlGaAsJournal of Crystal Growth, 1986
- Integrated safety system for MOCVD laboratoryJournal of Crystal Growth, 1986
- Misfit Dislocation Generation for MBE Grown GaAs on In-Doped LEC-GaAs SubstratesJapanese Journal of Applied Physics, 1985
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983