Low-frequency noise in Gallium Arsenide MESFETs
- 30 November 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (11) , 1003-1013
- https://doi.org/10.1016/0038-1101(84)90074-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurementsIEEE Electron Device Letters, 1984
- SURFACE-STATE RELATED l/f NOISE IN p-n JUNCTIONS AND MOS TRANSISTORSApplied Physics Letters, 1968