Characteristics of Different Thickness a-Si:H/Metal Schottky Barrier Cell Structures-Results and Analysis
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Optimization of hydrogenated amorphous silicon p–i–n solar cells with two-step i layers guided by real-time spectroscopic ellipsometryApplied Physics Letters, 1998
- Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin filmsJournal of Applied Physics, 1997
- Initial, rapid light-induced changes in hydrogenated amorphous silicon materials and solar cell structures: The effects of charged defectsApplied Physics Letters, 1996
- The Effect of H2 Dilution on the Stability of a-Si:H based Solar CellsMRS Proceedings, 1994
- Improved defect-pool model for charged defects in amorphous siliconPhysical Review B, 1993
- Interference-Free Determination of the Absorption Coefficient of Amorphous Silicon Thin FilmsJapanese Journal of Applied Physics, 1992
- Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsPhysical Review B, 1990
- Internal photoemission of holes and the mobility gap of hydrogenated amorphous siliconPhysical Review Letters, 1989
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si–Ge Alloys from Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1986
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981