Interstitial trapping by Ga or Si atoms in electron-irradiated aluminium

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Abstract
The recovery of electron-irradiated pure aluminium and dilute Al(Ga) and Al(Si) alloys has been studied by means of electrical resistivity measurements and isochronal anneals between 28 and 58 K. The data have been fitted to computed curves in order to obtain the capture radii of mobile self-interstitials by self-interstitials (ri/rυ = 1.6 + 0.2), by gallium atoms (rGa/rυ = 0.5 ± 0.1) and by silicon atoms (rSi/r. = 0.6 + 0.1), relative to the capture radius by a vacancy rυ. The correlations between the capture radii of solutes and the volume dilatation of the lattice-cell or the electronic perturbation they produce are discussed.