High-resolution recoil spectrometry for separate characterization of Ga and As in AlxGa(1−x)As structures

Abstract
Mass and energy‐dispersive recoil spectrometry, where the recoil energy is derived from the recoil time of flight, has been used to characterize the depth distribution of Al, Ga, and As in an AlxGa(1−x)As quantum‐well structure. Signals characterizing the Al, Ga, and As distribution with good separation between Ga and As (average crosstalk <2%) could be obtained from depths less than 560 nm from the surface. The depth resolution of the As signal at the surface was 16 nm FWHM, which is considerably better than achieved using a silicon particle detector (34 nm).

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