Interface analysis by x-ray diffraction topography
- 31 August 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (8) , 1163-1166
- https://doi.org/10.1016/0038-1101(70)90126-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Method for the Detection of Dislocations in Silicon by X-Ray Extinction ContrastPhysical Review B, 1958
- Schatten von Versetzungslinien im Röntgen-DiagrammZeitschrift für Naturforschung A, 1958
- Direct Observation of Individual Dislocations by X-Ray DiffractionJournal of Applied Physics, 1958