Reflection high‐energy electron diffraction study of growth and interface formation of the Ga1−xInxSb/InAs strained‐layer superlattices
- 1 March 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (5) , 2249-2252
- https://doi.org/10.1063/1.351394
Abstract
Growth and interface formation of the Ga1−xInxSb/InAs (x≤0.4) strained‐layer superlattices (SLSs) on GaSb(100) substrates have been studied by the reflection high‐energy electron diffraction (RHEED) during molecular beam epitaxy. A number of surface atomic structures were observed in the growth of the SLS: a (1×3) phases from the InAs epilayer surface; a (2×3) phase, a (2×4) phase and diffuse (1×1)‐like phases from the InAs epilayer surface. The RHEED intensity variations in the formation of the interfaces have been discussed in terms of interface chemical reactions.This publication has 8 references indexed in Scilit:
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