Growth and characterization of InAs/Ga1−xInxSb strained-layer superlattices
- 9 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (15) , 1418-1420
- https://doi.org/10.1063/1.102486
Abstract
We report the successful growth of InAs/Ga1−xInxSb strained‐layer superlattices, which have been proposed for far‐infrared applications. The samples were grown by molecular beam epitaxy, and characterized by reflection high‐energy electron diffraction, x‐ray diffraction, and photoluminescence. Best structural quality is achieved for superlattices grown on thick, strain‐relaxed, GaSb buffer layers on GaAs substrates at fairly low substrate temperatures (0.75In0.25Sb superlattice, an energy gap of 140±40 meV (≊9 μm) is measured. This result demonstrates that far‐infrared cutoff wavelengths are compatible with short superlattice periods in this material system.Keywords
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