Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (4) , 150-152
- https://doi.org/10.1109/55.31700
Abstract
Long-wavelength infrared photodiodes were fabricated using InAs/sub 1-x/Sb/sub x//InSb (x=0.82-0.85) strained-layer superlattices (SLSs). These structures can be grown using either molecular-beam epitaxy or metalorganic chemical vapor deposition. These photodiodes display broad spectral responses up to wavelengths greater than or approximately equal to 10 mu m, and detectivities of 1*10/sup 9/ cm-Hz/sup 1/2//W at 10 mu m.Keywords
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