Abstract
The transport properties of Nb0.53 Ti0.47-Ge multilayer samples with similar Nb0.53 Ti0.47 layer thicknesses but varying Ge layer thicknesses were studied. Evidence for a three- to two-dimensional crossover was observed in the temperature and magnetic field dependences of resistance when the Ge layer thickness passes through a critical thickness of ∼ 30 Å, which suggests a strong effect of the barrier width on quantum diffusion processes in disordered multilayer systems.