Influence on the transport properties of the deposition temperature of a-Si:H films deposited from mixtures of silane in helium at high deposition rates
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 403-406
- https://doi.org/10.1016/0022-3093(93)90575-i
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Hydrogen, microstructure and defect density in hydrogenated amorphous siliconJournal de Physique I, 1992
- General analysis of the modulated-photocurrent experiment including the contributions of holes and electronsPhysical Review B, 1992
- Electron time of flight experiment under high electric field in a-Si: HSolid State Communications, 1992
- A fully automated hot-wall multiplasma-monochamber reactor for thin film depositionJournal of Vacuum Science & Technology A, 1991
- Studies by photothermal deflection spectroscopy of defect formation in a-Si:HPhilosophical Magazine Part B, 1991
- Study of the density of states of hydrogenated amorphous silicon from time-of-flight and modulated photocurrent experimentsJournal of Non-Crystalline Solids, 1991
- Determination of the density of states of the conduction-band tail in amorphous materials: Application to a-Si1−xGex:H alloysPhilosophical Magazine Part B, 1990