CuInSe 2 film growth using precursors deposited at low temperature
- 30 June 1996
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 41-42, 219-229
- https://doi.org/10.1016/0927-0248(95)00101-8
Abstract
No abstract availableKeywords
Funding Information
- European Commission (JOUR2-CT92-0141)
- Bundesministerium für Bildung und Forschung (0328059E)
- Ministry of Education, Science and Technology
This publication has 4 references indexed in Scilit:
- Studies of the growth mechanism of polycrystalline CuInSe2 thin films prepared by a sequential processJournal of Crystal Growth, 1995
- A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporationAdvanced Materials, 1993
- Phase Equilibria, Chemistry, and Thermodynamics during Vaporization of Indium SelenideJournal of the Electrochemical Society, 1987
- Single-crystal sputtering including the channeling phenomenonCanadian Journal of Physics, 1968