Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs–AlxGa1-xAs Heterojunction Interface
- 1 July 1982
- journal article
- research article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 51 (7) , 2168-2173
- https://doi.org/10.1143/jpsj.51.2168
Abstract
Magnetophonon resonance in a two-dimensional electron system at the interface of GaAs–Al x Ga 1- x As heterojunction was investigated using pulsed high magnetic fields up to 35 T. The fundamental peaks with a harmonic number N =1 was observed for the first time. The polaron mass of 0.0745±0.0015 m e was determined by the analysis of the oscillatory resistance change using the LO phonon energy of GaAs. This value was successfully interpreted in terms of the non-parabolicity of the conduction band in GaAs taking into account the two dimensionality of the electronic state. A remarkably large damping of the oscillation was observed in spite of the large electron mobility.Keywords
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