Direct Observation of Dislocations in Silicon Single Crystals Using a White X‐Ray Radiation Technique
- 1 January 1964
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 6 (1) , 169-172
- https://doi.org/10.1002/pssb.19640060115
Abstract
In this paper a new method is described for the direct observation of dislocations in silicon single crystals. It is based on the use of white X‐ray radiation, and gives, on a single photograph, information about the Burgers vectors of the dislocations.Keywords
This publication has 2 references indexed in Scilit:
- Direct Observation of Imperfections in Semiconductor Crystals by Anomalous Transmission of X RaysJournal of Applied Physics, 1962
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959